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MOVPE growth and characterization of znte epilayers on (100) znte:P substrates (Articolo in rivista)
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- Label
- MOVPE growth and characterization of znte epilayers on (100) znte:P substrates (Articolo in rivista) (literal)
- Anno
- 2002-01-01T00:00:00+01:00 (literal)
- Alternative label
Lovergine N., Traversa M., Prete P., Yoshino K., Ozeki M., Mancini A.M. (2002)
MOVPE growth and characterization of znte epilayers on (100) znte:P substrates
in Journal of crystal growth
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- Lovergine N., Traversa M., Prete P., Yoshino K., Ozeki M., Mancini A.M. (literal)
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- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Titolo
- MOVPE growth and characterization of znte epilayers on (100) znte:P substrates (literal)
- Abstract
- The growth of ZnTe by atmospheric pressure metalorganic vapour phase
epitaxy on (100)ZnTe:P substrates is reported. The epilayers were grown at
340°C after in situ H2 heat cleaning of the substrate for surface oxide
removal. Secondary ion mass spectrometry analysis of as-grown samples has
shown that in situ treatment temperatures above 240°C are necessary.
Moreover, no phosphorous incorporation occurs in the epilayers by either
diffusion from the substrate or auto-doping through the vapour. Carbon is
instead incorporated in the epilayers at concentrations higher than in the
substrate. 4.2K photoluminescence (PL) measurements show a dominant band
edge emission, whose main component at 2.3809eV is identified, by
comparison with reflectance spectra, with the 1s-state free exciton line,
its FWHM being 2.2meV. A weak 2s-state exciton line also appears on the
high-energy side of the ground-state emission, further confirming the high
optical quality and purity of the epilayers. Donor and acceptor bound
exciton lines are also identified within the band edge region, whilst
free-to-bound and donoracceptor pair bands below 2.37eV in the PL spectra
are ascribed to luminescence from the substrate. (literal)
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