Room temperature point defect migration in crystalline Si (Articolo in rivista)

Type
Label
  • Room temperature point defect migration in crystalline Si (Articolo in rivista) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Alternative label
  • Libertino S., Coffa S. (2002)
    Room temperature point defect migration in crystalline Si
    in Diffusion and defect data, solid state data. Part B, Solid state phenomena
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Libertino S., Coffa S. (literal)
Pagina inizio
  • 207 (literal)
Pagina fine
  • 212 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 82-84 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 6 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMETEM, Stradale Primosole, 50 95121 Catania, Italy (literal)
Titolo
  • Room temperature point defect migration in crystalline Si (literal)
Abstract
  • The evolution of Interstitial (I) type defects in Si and its influence on out of equilibrium I super-saturation level is investigated. Two approaches complementary to Quantum Mechanics Calculations (QMC) are applied: the Kinetic Lattice Monte Carlo (KLMC) and the Non-Lattice Kinetic Monte Carlo (NKMC). Our simulations show that the behaviour of I-super-saturation during a far from equilibrium stage is strongly affected by the correspondent aggregate structural evolution. Therefore, even if KLMC and NKMC are based on the same energetics derived by QMC, they give a different prediction of the supersaturation behaviour. (literal)
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