Luminescence following highly localized hole carrier injection into ingaas quantum dots (Articolo in rivista)

Type
Label
  • Luminescence following highly localized hole carrier injection into ingaas quantum dots (Articolo in rivista) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1143/JJAP.41.5127 (literal)
Alternative label
  • Johal T.K., Pagliara G., Lomascolo M., Taurino A., Catalano M., Rinaldi R., Passaseo A., Cingolani R. (2002)
    Luminescence following highly localized hole carrier injection into ingaas quantum dots
    in Japanese journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Johal T.K., Pagliara G., Lomascolo M., Taurino A., Catalano M., Rinaldi R., Passaseo A., Cingolani R. (literal)
Pagina inizio
  • 5127 (literal)
Pagina fine
  • 5128 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 41 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 8 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Lecce, Natl Nanotechnol Lab, INFM, Dipartimento Ingn Innovaz, I-73100 Lecce, Italy CNR, IME, I-73100 Lecce, Italy (literal)
Titolo
  • Luminescence following highly localized hole carrier injection into ingaas quantum dots (literal)
Abstract
  • Tunneling current induced luminescence (TCIL) spectra of capped InGaAs quantum dots (QD) are presented. In contrast to the inhomogeneously broadened photoluminescence, the TCIL shows sharp excitonic lines of typical widths of 1.5-2 meV. Due to the high spatial resolution afforded by using a scanning tunneling microscope tip, TCIL spectra have been measured at various spatial locations on a capped QD sample. It is proposed that the measured luminescence spectra are of a single QD, a pair of coupled QDs and an ensemble of QDs. (literal)
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