Excitation and de-excitation properties of silicon quantum dots under electrical pumping (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Excitation and de-excitation properties of silicon quantum dots under electrical pumping (Articolo in rivista) (literal)

Anno

• 2002-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.1505117 (literal)

Alternative label

• A. Irrera, D. Pacifici, M. Miritello, G. Franzò, F. Priolo, F. Iacona, D. Sanfilippo, G. Di Stefano, and P.G. Fallica (2002)
  Excitation and de-excitation properties of silicon quantum dots under electrical pumping
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• A. Irrera, D. Pacifici, M. Miritello, G. Franzò, F. Priolo, F. Iacona, D. Sanfilippo, G. Di Stefano, and P.G. Fallica (literal)

Pagina inizio

• 1866 (literal)

Pagina fine

• 1868 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 81 (literal)

Rivista

• Applied physics letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 3 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 10 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Catania, INFM, Corso Italia 57, I-95129 Catania, Italy. Univ Catania, Dipartimento Fis & Astron, I-95129 Catania, Italy CNR, IMM, Sez Catania, I-95121 Catania, Italy ST Microelect, I-95121 Catania, Italy (literal)

Titolo

• Excitation and de-excitation properties of silicon quantum dots under electrical pumping (literal)

Abstract

• In this work, the stationary and time-resolved electroluminescence (EL) properties of Si quantum dots embedded within a metal-oxide-semiconductor device are investigated. In particular, we measured the excitation cross section of Si nanocrystals under electrical pumping, finding a value of 4.7E-14 cm2 which is two orders of magnitude higher with respect to the excitation cross section under 488 nm optical pumping. We also studied the radiative and nonradiative decay processes occurring in these devices by measuring the time evolution of the EL signal. We demonstrate that the mechanism responsible for the emission is the same under both electrical and optical pumping. The overall quantum efficiency of the electrical pumping is estimated to be two orders of magnitude higher than the quantum efficiency for optical pumping in all the studied temperature ranges. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FRANCESCO PRIOLO (Persona)
• ALESSIA IRRERA (Persona)
• FABIO SANTO IACONA (Persona)
• GIORGIA FRANZO' (Unità di personale interno)
• MARIA PILAR MIRITELLO (Unità di personale interno)

Incoming links:

Autore CNR di

• GIORGIA FRANZO' (Unità di personale interno)
• FRANCESCO PRIOLO (Persona)
• ALESSIA IRRERA (Persona)
• FABIO SANTO IACONA (Persona)
• MARIA PILAR MIRITELLO (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)