Electroluminescence of Si quantum dots in MOS structures (Articolo in rivista)

Type
Label
  • Electroluminescence of Si quantum dots in MOS structures (Articolo in rivista) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Alternative label
  • A. Irrera, G. Franzò, E. Ceretta Moreira, F. Iacona and F. Priolo (2002)
    Electroluminescence of Si quantum dots in MOS structures
    in Diffusion and defect data, solid state data. Part B, Solid state phenomena
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • A. Irrera, G. Franzò, E. Ceretta Moreira, F. Iacona and F. Priolo (literal)
Pagina inizio
  • 601 (literal)
Pagina fine
  • 606 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 82-84 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 6 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Catania, INFM, Dipartimento Fis & Astron, Corso Italia 57, IT-95129 Catania, Italy. IMETEM, CNR, IT-95121 Catania, Italy (literal)
Titolo
  • Electroluminescence of Si quantum dots in MOS structures (literal)
Abstract
  • We have studied the structural, electrical and optical properties of MOS devices, where the dielectric layer consists of a substoichiometric SiOx (x < 2) thin film deposited by plasma enhanced chemical vapor deposition. After deposition the SiOx samples were annealed at 1250 degreesC for I h; the thermal treatment induces the separation of the Si and SiO2 phases with the formation of Si nanocrystals embedded in the insulating matrix. We observed at room temperature a quite intense electroluminescence signal that is attributed to emission from silicon nanocrystals. The effects of the Si concentration in the SiOx layer on the electrical and optical properties of these devices are reported and discussed. (literal)
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