http://www.cnr.it/ontology/cnr/individuo/prodotto/ID35198
Luminescence properties of Si nanocrystals embedded in optical microcavities (Articolo in rivista)
- Type
- Label
- Luminescence properties of Si nanocrystals embedded in optical microcavities (Articolo in rivista) (literal)
- Anno
- 2002-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/S0928-4931(01)00424-6 (literal)
- Alternative label
F. Iacona, G. Franzò, E. Ceretta Moreira, D. Pacifici, A. Irrera, and F. Priolo (2002)
Luminescence properties of Si nanocrystals embedded in optical microcavities
in Materials science & engineering. C, Biomimetic materials, sensors and systems (Print)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- F. Iacona, G. Franzò, E. Ceretta Moreira, D. Pacifici, A. Irrera, and F. Priolo (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- IMETEM, CNR, Stradale Primosole 50, I-95121 Catania, Italy.
Univ Catania, INFM, I-95129 Catania, Italy
Univ Catania, Dipartimento Fis & Astron, I-95129 Catania, Italy (literal)
- Titolo
- Luminescence properties of Si nanocrystals embedded in optical microcavities (literal)
- Abstract
- Strong room temperature photoluminescence (PL) in the wavelength range
700-950 nm has been observed from Si nanocrystals (nc). obtained by
high-temperature annealing of SiO thin films prepared by plasma enhanced
chemical vapor deposition (PECVD). A marked redshift of the luminescence
peak has been detected by increasing the Si concentration of the SiO films
or the annealing temperature, due to the larger Si nc mean size obtained
under these conditions. Narrower and more intense PL spectra are observed
by decreasing the Si concentration of the SiO samples or by increasing the
annealing temperature, but the overall performances remain still far from
those required for application of this material in optoelectronic devices.
On the other hand, by embedding Si nc within SirSiO Fabry-Perot
microcavities, extremely narrow (DeltaLambda about 1.5 nm) and very intense
PL peaks can be obtained. The emitted wavelength can be tuned within a wide
range by properly varying the cavity resonance. The PL intensity is more
than an order of magnitude above that of similar samples outside the cavity
and the luminescence is strongly directional. (literal)
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