Interstitial diffusion influence upon two-dimensional boron profiles (Articolo in rivista)

Type
Label
  • Interstitial diffusion influence upon two-dimensional boron profiles (Articolo in rivista) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Alternative label
  • Giannazzo F., Raineri V., Privitera V., Priolo F. (2002)
    Interstitial diffusion influence upon two-dimensional boron profiles
    in Diffusion and defect data, solid state data. Part B, Solid state phenomena
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Giannazzo F., Raineri V., Privitera V., Priolo F. (literal)
Pagina inizio
  • 183 (literal)
Pagina fine
  • 183 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 82-84 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Catania, Dipartimento Fis & Astron, IT-95129 Catania, Italy CNR, IMETEM, IT-95121 Catania, Italy (literal)
Titolo
  • Interstitial diffusion influence upon two-dimensional boron profiles (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 3-908450-64-0 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autoriVolume
  • Raineri, V; Priolo, F; Kittler, M; Richter, H (literal)
Abstract
  • The effect of interstitials on two-dimensional boron diffusion has been deduced by two-dimensional profiling on samples implanted with I keV B ions. Carrier profiles were measured by scanning capacitance microscopy enhancing depth and lateral resolution by a double bevelling sample preparation, Implants were performed at two different doses (1 X 10(14) cm(-2) and 1 x 10(15) cm(-2)) into patterned wafers with several stripe widths ranging from 0.5 to 5 mum. B transient enhanced diffusion is strongly reduced with decreasing feature size, depending also on implanted dose. The effect is inhibited if a uniform concentration of displaced silicon atoms is obtained by self-Si ion implantation after mask removing. (literal)
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