http://www.cnr.it/ontology/cnr/individuo/prodotto/ID35190
Interstitial diffusion influence upon two-dimensional boron profiles (Articolo in rivista)
- Type
- Label
- Interstitial diffusion influence upon two-dimensional boron profiles (Articolo in rivista) (literal)
- Anno
- 2002-01-01T00:00:00+01:00 (literal)
- Alternative label
Giannazzo F., Raineri V., Privitera V., Priolo F. (2002)
Interstitial diffusion influence upon two-dimensional boron profiles
in Diffusion and defect data, solid state data. Part B, Solid state phenomena
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Giannazzo F., Raineri V., Privitera V., Priolo F. (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
- GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Univ Catania, Dipartimento Fis & Astron, IT-95129 Catania, Italy
CNR, IMETEM, IT-95121 Catania, Italy (literal)
- Titolo
- Interstitial diffusion influence upon two-dimensional boron profiles (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autoriVolume
- Raineri, V; Priolo, F; Kittler, M; Richter, H (literal)
- Abstract
- The effect of interstitials on two-dimensional boron diffusion has been deduced by two-dimensional profiling on samples implanted with I keV B ions. Carrier profiles were measured by scanning capacitance microscopy enhancing depth and lateral resolution by a double bevelling sample preparation, Implants were performed at two different doses (1 X 10(14) cm(-2) and 1 x 10(15) cm(-2)) into patterned wafers with several stripe widths ranging from 0.5 to 5 mum. B transient enhanced diffusion is strongly reduced with decreasing feature size, depending also on implanted dose. The effect is inhibited if a uniform concentration of displaced silicon atoms is obtained by self-Si ion implantation after mask removing. (literal)
- Prodotto di
- Autore CNR
- Insieme di parole chiave
Incoming links:
- Autore CNR di
- Prodotto
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
- Insieme di parole chiave di