Two dimensional boron diffusion determination by scanning capacitance microscopy (Articolo in rivista)

Type
Label
  • Two dimensional boron diffusion determination by scanning capacitance microscopy (Articolo in rivista) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/S0921-5107(01)00999-0 (literal)
Alternative label
  • Giannazzo F., Raineri V., Priolo F. (2002)
    Two dimensional boron diffusion determination by scanning capacitance microscopy
    in Materials science & engineering. B, Solid-state materials for advanced technology
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Giannazzo F., Raineri V., Priolo F. (literal)
Pagina inizio
  • 220 (literal)
Pagina fine
  • 223 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 91 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMETEM, I-95121 Catania, Italy Univ Catania, Dipartimento Fis & Astron, I-95129 Catania, Italy (literal)
Titolo
  • Two dimensional boron diffusion determination by scanning capacitance microscopy (literal)
Abstract
  • Two-dimensional boron diffusion has been investigated on sub-micron patterned samples implanted with 1 keV B ions and diffused at 1100 °C for different times. Carrier profiles were measured by scanning capacitance microscopy (SCM) whose depth and lateral resolution was enhanced by a double bevelling sample preparation. Implants were performed at two different doses (1E14 and 1E15 cm-2) into patterned wafers with several stripe widths ranging from 0.5 to 5 microns. B transient enhanced diffusion is strongly reduced with decreasing feature size, depending also on the implanted dose. The phenomenon has been related to the influence of Si self-interstitials on the B transient diffusion. (literal)
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