http://www.cnr.it/ontology/cnr/individuo/prodotto/ID35189
Two dimensional boron diffusion determination by scanning capacitance microscopy (Articolo in rivista)
- Type
- Label
- Two dimensional boron diffusion determination by scanning capacitance microscopy (Articolo in rivista) (literal)
- Anno
- 2002-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/S0921-5107(01)00999-0 (literal)
- Alternative label
Giannazzo F., Raineri V., Priolo F. (2002)
Two dimensional boron diffusion determination by scanning capacitance microscopy
in Materials science & engineering. B, Solid-state materials for advanced technology
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Giannazzo F., Raineri V., Priolo F. (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- CNR, IMETEM, I-95121 Catania, Italy
Univ Catania, Dipartimento Fis & Astron, I-95129 Catania, Italy (literal)
- Titolo
- Two dimensional boron diffusion determination by scanning capacitance microscopy (literal)
- Abstract
- Two-dimensional boron diffusion has been investigated on sub-micron
patterned samples implanted with 1 keV B ions and diffused at 1100 °C for
different times. Carrier profiles were measured by scanning capacitance
microscopy (SCM) whose depth and lateral resolution was enhanced by a
double bevelling sample preparation. Implants were performed at two
different doses (1E14 and 1E15 cm-2) into patterned wafers with several
stripe widths ranging from 0.5 to 5 microns. B transient enhanced
diffusion is strongly reduced with decreasing feature size, depending also
on the implanted dose. The phenomenon has been related to the influence of
Si self-interstitials on the B transient diffusion. (literal)
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