Two-dimensional effects on ultralow energy B implants in Si (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Two-dimensional effects on ultralow energy B implants in Si (Articolo in rivista) (literal)

Anno

• 2002-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1116/1.1424277 (literal)

Alternative label

• Giannazzo F., Priolo F., Raineri V., Privitera V., Picariello A., Battaglia A., Moffat S. (2002)
  Two-dimensional effects on ultralow energy B implants in Si
  in Journal of vacuum science & technology. B, Microelectronics and nanometer structures
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Giannazzo F., Priolo F., Raineri V., Privitera V., Picariello A., Battaglia A., Moffat S. (literal)

Pagina inizio

• 414 (literal)

Pagina fine

• 418 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 20 (literal)

Rivista

• Journal of vacuum science & technology. B, Microelectronics and nanometer structures (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 1 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMETEM, I-95121 Catania, Italy Catania Univ, Dipartimento Fis, I-95129 Catania, Italy Appl Mat Inc, Catania, Italy Appl Implant Technol Ltd, Appl Mat, Horsham, W Sussex, England (literal)

Titolo

• Two-dimensional effects on ultralow energy B implants in Si (literal)

Abstract

• A systematic work has been carried out in order to optimize sample preparation and scanning capacitance microscopy (SCM) on double beveled samples. The method allowed us to enhance depth and lateral resolution and it has been applied to characterize two-dimensional profiles of ultralow energy B implants in Si after diffusion. Implants have been performed into patterned wafers with different stripe widths ranging from 0.5 to 5 microns. B transient enhanced diffusion is strongly reduced with decreasing feature size below about 2 microns. This effect has been related to the high interstitial diffusivity with respect to B. It is even enlarged for lateral diffusion due to the interstitial recombination under the SiO2 mask at the Si/SiO2 interface. The implications for the formation of ultrashallow junctions in device structures are also discussed. (literal)

Prodotto di

• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• VITTORIO PRIVITERA (Persona)
• FRANCESCO PRIOLO (Persona)
• FILIPPO GIANNAZZO (Persona)
• VITO RAINERI (Persona)

Insieme di parole chiave

• Parole chiave di "Two-dimensional effects on ultralow energy B implants in Si" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• VITTORIO PRIVITERA (Persona)
• VITO RAINERI (Persona)
• FRANCESCO PRIOLO (Persona)
• FILIPPO GIANNAZZO (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of vacuum science & technology. B, Microelectronics and nanometer structures (Rivista)

Insieme di parole chiave di

• Parole chiave di "Two-dimensional effects on ultralow energy B implants in Si" (Insieme di parole chiave)