Electroluminescence of silicon nanocrystals in MOS structures (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Electroluminescence of silicon nanocrystals in MOS structures (Articolo in rivista) (literal)

Anno

• 2002-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1007/s003390101019 (literal)

Alternative label

• G. Franzò, A. Irrera, E. Ceretta Moreira, M. Miritello, F. Iacona, D. Sanfilippo, G. Di Stefano, P.G. Fallica, and F. Priolo (2002)
  Electroluminescence of silicon nanocrystals in MOS structures
  in Applied physics. A, Materials science & processing (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• G. Franzò, A. Irrera, E. Ceretta Moreira, M. Miritello, F. Iacona, D. Sanfilippo, G. Di Stefano, P.G. Fallica, and F. Priolo (literal)

Pagina inizio

• 1 (literal)

Pagina fine

• 5 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 74 (literal)

Rivista

• Applied physics. A, Materials science & processing (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 5 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 1 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Catania, INFM, Corso Italia 57, I-95129 Catania, Italy. Univ Catania, Dipartimento Fis, I-95129 Catania, Italy CNR, IMETEM, I-95121 Catania, Italy STMicroelectronics, I-95121 Catania, Italy (literal)

Titolo

• Electroluminescence of silicon nanocrystals in MOS structures (literal)

Abstract

• We have studied the structural, electrical and optical properties of MOS devices, where the dielectric layer consists of a substoichiometric SiOx (x < 2) thin film deposited by plasma-enhanced chemical vapor deposition. After deposition the samples were annealed at high temperature (> 1000 °C) to induce the separation of the Si and the SiO2 phases with the formation of Si nanocrystals embedded in the insulating matrix. We observed at room temperature a quite intense electroluminescence (EL) signal with a peak at about 850 nm. The EL peak position is very similar to that observed in photoluminescence in the very same device, demonstrating that the observed EL is due to electron-hole recombination in the Si nanocrystals and not to defects. The effects of the Si concentration in the SiOx layer and of the annealing temperature on the electrical and optical properties of these devices are also reported and discussed. In particular, it is shown that by increasing the Si content in the SiOx layer the operating voltage of the device decreases and the total efficiency of emission increases. These data are reported and their implications discussed. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• GIORGIA FRANZO' (Unità di personale interno)
• ALESSIA IRRERA (Persona)
• FABIO SANTO IACONA (Persona)
• MARIA PILAR MIRITELLO (Unità di personale interno)

Incoming links:

Autore CNR di

• GIORGIA FRANZO' (Unità di personale interno)
• ALESSIA IRRERA (Persona)
• FABIO SANTO IACONA (Persona)
• MARIA PILAR MIRITELLO (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics. A, Materials science & processing (Rivista)