http://www.cnr.it/ontology/cnr/individuo/prodotto/ID35156
Low frequency current noise in a unstressed/stressed thin oxide metal-oxide-semiconductor capacitors (Articolo in rivista)
- Type
- Label
- Low frequency current noise in a unstressed/stressed thin oxide metal-oxide-semiconductor capacitors (Articolo in rivista) (literal)
- Anno
- 2002-01-01T00:00:00+01:00 (literal)
- Alternative label
Crupi F., Iannaccone G., Ciofi C., Neri B., Lombardo S., Pace C. (2002)
Low frequency current noise in a unstressed/stressed thin oxide metal-oxide-semiconductor capacitors
in Solid-state electronics
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- Crupi F., Iannaccone G., Ciofi C., Neri B., Lombardo S., Pace C. (literal)
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- Pagina fine
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- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Titolo
- Low frequency current noise in a unstressed/stressed thin oxide metal-oxide-semiconductor capacitors (literal)
- Abstract
- In this work we investigate the low frequency current noise in
metal-oxide-semiconductor structures biased with a constant voltage in
different oxide degradation stages. We report 1/f noise in fresh oxides
with an anomalous current dependence that is quite similar to what has been
reported in the direct tunneling regime. A higher flicker noise level is
observed after stressing the oxide. Both observations are ascribed to the
presence of an additional tunneling component assisted by native or
stress-induced oxide traps. A further increase of the low frequency current
noise is observed after the oxide breakdown (BD). It is shown that in the
quantum point contact case single fluctuators, probably consisting of
electron traps inside the oxide, can be resolved, whereas the current noise
at the thermal BD presents a 1/f spectrum, due to the effects of ensemble
averaging between many of these fluctuators. (literal)
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