Charge states distribution of 0.16-3.3 mev He ions transmitted through silicon (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Charge states distribution of 0.16-3.3 mev He ions transmitted through silicon (Articolo in rivista) (literal)

Anno

• 2002-01-01T00:00:00+01:00 (literal)

Alternative label

• Bianconi M., Bentini G. G., Lotti R., Nipoti R. (2002)
  Charge states distribution of 0.16-3.3 mev He ions transmitted through silicon
  in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Bianconi M., Bentini G. G., Lotti R., Nipoti R. (literal)

Pagina inizio

• 66 (literal)

Pagina fine

• 70 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 193 (literal)

Rivista

• Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR- Istituto LAMEL (literal)

Titolo

• Charge states distribution of 0.16-3.3 mev He ions transmitted through silicon (literal)

Abstract

• The equilibrium charge state distribution of He ions transmitted through silicon in a random direction was measured in the energy range 0.16-3.3 MeV. The surface contamination, investigated by back-scattering spectrometry, amounted to a few monolayers. The measured data, integrated with the available literature points, cover a wide range of conditions. At the lower end (velocity about 1 a.u.) there is a consistent fraction of neutral He and the process is strongly influenced by solid state e.ects; at the higher end (velocity about 6 a.u.) most of the ions are stripped and the process can be described by individual He-Si collisions. The use of a semi-classical approach, based on the early theory of Bohr, allows for a satisfactory description of the Heþ/He2+ ratio in the whole energy range. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• GIAN GIUSEPPE BENTINI (Unità di personale esterno)
• ROBERTA NIPOTI (Unità di personale interno)
• MARCO BIANCONI (Persona)

Incoming links:

Autore CNR di

• MARCO BIANCONI (Persona)
• ROBERTA NIPOTI (Unità di personale interno)
• GIAN GIUSEPPE BENTINI (Unità di personale esterno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Rivista)