Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED (Articolo in rivista) (literal)

Anno

• 2002-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/S0169-4332(01)00750-4 (literal)

Alternative label

• Benedetti A., Cullis A.G., Armigliato A., Balboni R., Frabboni S., Mastracchio G.F., Pavia G. (2002)
  Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED
  in Applied surface science; Elsevier Science Publishers, Amsterdam (Paesi Bassi)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Benedetti A., Cullis A.G., Armigliato A., Balboni R., Frabboni S., Mastracchio G.F., Pavia G. (literal)

Pagina inizio

• 214 (literal)

Pagina fine

• 218 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 188 (literal)

Rivista

• Applied surface science (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 5 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 1-2 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR-IMM, I-40129 Bologna, Italy Univ Modena, Dipartimento Fis, I-41100 Modena, Italy Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England ST Microelect SRL, I-20041 Agrate Brianza, Italy (literal)

Titolo

• Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED (literal)

Abstract

• The use of TiSi2 layers as ohmic contacts in complementary MOS (CMOS) devices is expected to introduce large distortions in the underlying silicon which may degrade the device performances. In this work, the TEM technique known as convergent beam electron diffraction (CBED) has been employed to map the strain distributions across 110 cross-sectional specimens of sub-quarter-micron CMOS structures. Different experimental set-ups in terms of energy filtering, liquid nitrogen cooling and zone axis have been explored and compared to each other by using three differently equipped microscopes. The strain induced on silicon by TiSi2 layers has then been investigated, quantified and compared with that due to the presence of an oxide isolation trench. Also, the effects of depositing a TiN capping layer on TiSi2 have been analysed. Our results show that its presence results in a more tensile strain without altering the strain distribution trend. (literal)

Editore

• Elsevier Science Publishers (Editore)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ROBERTO BALBONI (Unità di personale interno)
• ALDO ARMIGLIATO (Unità di personale esterno)

Insieme di parole chiave

• Keywords of "Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• ROBERTO BALBONI (Unità di personale interno)
• ALDO ARMIGLIATO (Unità di personale esterno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied surface science (Rivista)

Editore di

• Elsevier Science Publishers (Editore)

Insieme di parole chiave di

• Keywords of "Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED" (Insieme di parole chiave)