C49-C54 phase transition in nanometric titanium disilicide nanograins (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• C49-C54 phase transition in nanometric titanium disilicide nanograins (Articolo in rivista) (literal)

Anno

• 2002-01-01T00:00:00+01:00 (literal)

Alternative label

• Alessandrino M.S., Grimaldi M.G., La Via F. (2002)
  C49-C54 phase transition in nanometric titanium disilicide nanograins
  in Microelectronic engineering
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Alessandrino M.S., Grimaldi M.G., La Via F. (literal)

Pagina inizio

• 189 (literal)

Pagina fine

• 196 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 64 (literal)

Rivista

• Microelectronic engineering (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Dipartimento di Fisica Università di Catania IMM (literal)

Titolo

• C49-C54 phase transition in nanometric titanium disilicide nanograins (literal)

Abstract

• The first order C49-C54 phase transition was studied in single TiSi grains embedded in a Si matrix by transmission electron microscopy and X-ray diffraction. The fraction of material transformed into C54 was determined at different times during the annealing in the 700-1100 °C temperature range. The fraction of C54 increases with temperature and the steady state value is reached in times of about 60 s. The data are interpreted in terms of heterogeneous nucleation at the silicide-silicon interface. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FRANCESCO LA VIA (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• FRANCESCO LA VIA (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Microelectronic engineering (Rivista)