http://www.cnr.it/ontology/cnr/individuo/prodotto/ID35130
Study of cosi2 thermal stability improved by interfacial cavities (Articolo in rivista)
- Type
- Label
- Study of cosi2 thermal stability improved by interfacial cavities (Articolo in rivista) (literal)
- Anno
- 2002-01-01T00:00:00+01:00 (literal)
- Alternative label
Alberti A., La Via F., Ravesi S., Pannitteri S., Bongiorno C. (2002)
Study of cosi2 thermal stability improved by interfacial cavities
in Microelectronic engineering
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Alberti A., La Via F., Ravesi S., Pannitteri S., Bongiorno C. (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- IMM
STmicroelectronics (literal)
- Titolo
- Study of cosi2 thermal stability improved by interfacial cavities (literal)
- Abstract
- The interfacial properties of 70-nm CoSi layers have been modulated by
implanting argon or nitrogen after silicide reaction. The effect of the
implant has been studied by transmission electron microscopy and sheet
resistance analyses. The structural stabilisation of the silicide layer has
been attributed to the formation of a band of cavities which have been
located at the silicide grain boundaries. They have delayed the occurrence
of the grooving process and extended the stability window by 75-100 °C. It
has been found that the thermal stability improvement is related to the
cavity density and size, and depends on the implanted species. The maximum
increment of the thermal budget has been found at a cavity size of 22 nm
and a cavity density of 2.5E10 / cm2. (literal)
- Prodotto di
- Autore CNR
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