Current-driven hysteresis effects in manganite spintronics devices (Articolo in rivista)

Type
Label
  • Current-driven hysteresis effects in manganite spintronics devices (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.74.014434 (literal)
Alternative label
  • I. Pallecchi; L. Pellegrino; A. Caviglia; E. Bellingeri; G. Canu; G.C. Gazzadi; A.S. Siri; D. Marre (2006)
    Current-driven hysteresis effects in manganite spintronics devices
    in Physical review. B, Condensed matter and materials physics; American Physical Society (APS), College Pk (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • I. Pallecchi; L. Pellegrino; A. Caviglia; E. Bellingeri; G. Canu; G.C. Gazzadi; A.S. Siri; D. Marre (literal)
Pagina inizio
  • 014434 (literal)
Pagina fine
  • 014434 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://link.aps.org/doi/10.1103/PhysRevB.74.014434 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 74 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 8 (literal)
Note
  • Scopu (literal)
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, INFM, LAMIA, I-16152 Genoa, Italy; Univ Genoa, Dipartimento Fis, I-16146 Genoa, Italy; CNR, INFM, Natl Res Ctr Nanostruct & Biosyst Surfaces S3, I-41100 Modena, Italy; Univ Genoa, I-16152 Genoa, Italy (literal)
Titolo
  • Current-driven hysteresis effects in manganite spintronics devices (literal)
Abstract
  • By carrying out differential resistance measurements in oxygen deficient La0.67Ba0.33MnO3-delta thin films at different magnetic fields, in submicrometric constricted regions patterned by focused ion beam, we find evidence of hysteretic resistance behavior as a function of both the external magnetic field and dc bias current. The resistance curves exhibit a marked asymmetry with respect to the polarity of the current. We suggest that the spin-polarized injected current exerts a torque on magnetic domains, whose rotation accounts for the hysteretic resistance changes. The memory effect of such constrictions is potentially interesting both for studying micromagnetic effects and in view of spintronics devices applications. (literal)
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