Charge Transport and Tunneling in Single-Walled Carbon Nanotube Bundles (Articolo in rivista)

Type
Label
  • Charge Transport and Tunneling in Single-Walled Carbon Nanotube Bundles (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Alternative label
  • Salvato, M; Cirillo, M; Lucci, M; Orlanducci, S; Ottaviani, I; Terranova, ML; Toschi, F (2008)
    Charge Transport and Tunneling in Single-Walled Carbon Nanotube Bundles
    in Physical review letters (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Salvato, M; Cirillo, M; Lucci, M; Orlanducci, S; Ottaviani, I; Terranova, ML; Toschi, F (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 101 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • \"[Salvato, M.; Cirillo, M.; Lucci, M.; Ottaviani, I.] Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy; [Salvato, M.; Cirillo, M.; Lucci, M.; Ottaviani, I.] Univ Roma Tor Vergata, MINAS Lab, I-00133 Rome, Italy; [Salvato, M.] INFM, CNR, Lab Reg Super Mat, I-84081 Baronissi, Italy; [Orlanducci, S.; Terranova, M. L.; Toschi, F.] Univ Roma Tor Vergata, Dipartimento Sci & Tecnol Chim, I-00133 Rome, Italy; [Orlanducci, S.; Terranova, M. L.; Toschi, F.] Univ Roma Tor Vergata, MINAS Lab, I-00133 Rome, Italy (literal)
Titolo
  • Charge Transport and Tunneling in Single-Walled Carbon Nanotube Bundles (literal)
Abstract
  • We investigate experimentally the transport properties of single-walled carbon nanotube bundles as a function of temperature and applied current over broad intervals of these variables. The analysis is performed on arrays of nanotube bundles whose axes are aligned along the direction of the externally supplied bias current. The data are found consistent with a charge transport model governed by the tunneling between metallic regions occurring through potential barriers generated by a nanotube's contact areas or bundle surfaces. Based on this model and on experimental data, we describe quantitatively the dependencies of the height of these barriers upon bias current and temperature. (literal)
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