Recent Advances in the Atmospheric Pressure PE-CVD of Fluorocarbon Films: Influence of Air and Water Vapour Impurities (Articolo in rivista)

Type
Label
  • Recent Advances in the Atmospheric Pressure PE-CVD of Fluorocarbon Films: Influence of Air and Water Vapour Impurities (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1002/ppap.200931107 (literal)
Alternative label
  • Fiorenza Fanelli; Giovanni Di Renzo; Francesco Fracassi; Riccardo d'Agostino (2009)
    Recent Advances in the Atmospheric Pressure PE-CVD of Fluorocarbon Films: Influence of Air and Water Vapour Impurities
    in Plasma processes and polymers (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Fiorenza Fanelli; Giovanni Di Renzo; Francesco Fracassi; Riccardo d'Agostino (literal)
Pagina inizio
  • S503 (literal)
Pagina fine
  • S507 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 6 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Dipartimento di Chimica, Universita` degli Studi di Bari-IMIP CNR, via Orabona 4, 70126 Bari, Italy (literal)
Titolo
  • Recent Advances in the Atmospheric Pressure PE-CVD of Fluorocarbon Films: Influence of Air and Water Vapour Impurities (literal)
Abstract
  • The influence of air and water vapour on the deposition process of fluoropolymers in argonhexafluoropropene (Ar-C3F6) filamentary dielectric barrier discharges was investigated by adding known concentrations of these contaminants to the feed gas. The obtained results show that Ar-C3F6 DBDs allow in depositing thin films with a XPS F/C ratio as high as 1.7. Under the experimental conditions investigated, contaminant addition slightly affects the F/C ratio of the coatings, and does not cause appreciable O- and N-uptake, but induces a decrease of the deposition rate. Preliminary results from the OES investigation of the gas phase and the GC-MS analysis of the gas effluent are also reported. (literal)
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