http://www.cnr.it/ontology/cnr/individuo/prodotto/ID34408
A Chemical Study of Plasma-Deposited Organosilicon Thin Films as Low-k Dielectrics (Articolo in rivista)
- Type
- Label
- A Chemical Study of Plasma-Deposited Organosilicon Thin Films as Low-k Dielectrics (Articolo in rivista) (literal)
- Anno
- 2009-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1002/ppap.200800211 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- A.M. Coclite; A. Milella; F. Palumbo; F. Fracassi; R. d'Agostino (literal)
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- Rivista
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Department of Chemistry, University of Bari, Via Orabona, 4,
70126 Bari, Italy
Institute of Inorganic Methodologies and Plasmas - CNR, Bari,
Italy (literal)
- Titolo
- A Chemical Study of Plasma-Deposited Organosilicon Thin Films as Low-k Dielectrics (literal)
- Abstract
- Thin films with low dielectric constant were deposited by PECVD from different organosilicon
precursors. Film structure and properties were strongly affected by the precursor choice.
Silane-based precursors resulted in films with permittivities as low as 2.3 with a limited
thickness loss of 6% upon thermal annealing at 400 8C.
Films deposited from siloxane monomers were characterized
by increased thickness shrinkage of 11%. Thermal
stability was correlated not only to the cross-linking
degree but also to the presence of methylene bridges
in the polymer backbone, which accounts for the better
thermal stability of silane-based films. Substrate heating
(150 8C) during deposition ensured the best balance
between very low permittivities and good thermal
stability. (literal)
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