A Chemical Study of Plasma-Deposited Organosilicon Thin Films as Low-k Dielectrics (Articolo in rivista)

Type
Label
  • A Chemical Study of Plasma-Deposited Organosilicon Thin Films as Low-k Dielectrics (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1002/ppap.200800211 (literal)
Alternative label
  • A.M. Coclite; A. Milella; F. Palumbo; F. Fracassi; R. d'Agostino (2009)
    A Chemical Study of Plasma-Deposited Organosilicon Thin Films as Low-k Dielectrics
    in Plasma processes and polymers (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • A.M. Coclite; A. Milella; F. Palumbo; F. Fracassi; R. d'Agostino (literal)
Pagina inizio
  • 512 (literal)
Pagina fine
  • 520 (literal)
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  • 6 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 9 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 8 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Department of Chemistry, University of Bari, Via Orabona, 4, 70126 Bari, Italy Institute of Inorganic Methodologies and Plasmas - CNR, Bari, Italy (literal)
Titolo
  • A Chemical Study of Plasma-Deposited Organosilicon Thin Films as Low-k Dielectrics (literal)
Abstract
  • Thin films with low dielectric constant were deposited by PECVD from different organosilicon precursors. Film structure and properties were strongly affected by the precursor choice. Silane-based precursors resulted in films with permittivities as low as 2.3 with a limited thickness loss of 6% upon thermal annealing at 400 8C. Films deposited from siloxane monomers were characterized by increased thickness shrinkage of 11%. Thermal stability was correlated not only to the cross-linking degree but also to the presence of methylene bridges in the polymer backbone, which accounts for the better thermal stability of silane-based films. Substrate heating (150 8C) during deposition ensured the best balance between very low permittivities and good thermal stability. (literal)
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