InAs(100) Surfaces Cleaning by an As-Free Low-Temperature 100 degrees C Treatment (Articolo in rivista)

Type
Label
  • InAs(100) Surfaces Cleaning by an As-Free Low-Temperature 100 degrees C Treatment (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1149/1.3076194 (literal)
Alternative label
  • M. Losurdo; M.M. Giangregorio; F. Lisco; P. Capezzuto; G. Bruno; D.S. Wolter; M. Angelo; A. Brown (2009)
    InAs(100) Surfaces Cleaning by an As-Free Low-Temperature 100 degrees C Treatment
    in Journal of the Electrochemical Society
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M. Losurdo; M.M. Giangregorio; F. Lisco; P. Capezzuto; G. Bruno; D.S. Wolter; M. Angelo; A. Brown (literal)
Pagina inizio
  • H263 (literal)
Pagina fine
  • H267 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 156 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, Inst Inorgan Methodol & Plasmas, IMIP, I-70126 Bari, Italy Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA (literal)
Titolo
  • InAs(100) Surfaces Cleaning by an As-Free Low-Temperature 100 degrees C Treatment (literal)
Abstract
  • Abstract: Oxide removal from InAs(100) surfaces was achieved using a combination of HF:methanol wet etching followed by atomic hydrogen treatment at a temperature as low as 100 degrees C without any stabilizing As flux. The process was monitored in real-time exploiting spectroscopic ellipsometry. Following this treatment, the surface morphology was found to be very smooth at the nanometer scale, with a reduced effective oxide thickness and no appreciable levels of elemental In and As. Furthermore, we demonstrate stability of such surfaces against oxide reformation. (literal)
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