http://www.cnr.it/ontology/cnr/individuo/prodotto/ID34326
A Novel Organosilicon Source for Low Temperature Plasma Deposition of Silicon Nitride-like Thin Films (Articolo in rivista)
- Type
- Label
- A Novel Organosilicon Source for Low Temperature Plasma Deposition of Silicon Nitride-like Thin Films (Articolo in rivista) (literal)
- Anno
- 2005-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1002/ppap.200500035 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Rosa Di Mundo; Riccardo d'Agostino; Francesco Fracassi; Fabio Palumbo (literal)
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- 1 Department of Chemistry, University of Bari, via Orabona 4, 70126 Bari, Italy
2 Institute for Inorganic Methodologies and Plasmas (IMIP) - CNR, via Orabona 4, 70126 Bari, (literal)
- Titolo
- A Novel Organosilicon Source for Low Temperature Plasma Deposition of Silicon Nitride-like Thin Films (literal)
- Abstract
- This paper deals with the deposition of silicon nitride-like films at low temperatures using radio frequency inductively coupled plasmas fed with bis(dimethylamino)dimethylsilane (BDMADMS) and argon (At). The effect of input power and BDMADMS-to-Ar ratio on the chemical composition of the deposited films has been investigated by means of Fourier transform infrared absorption spectroscopy (Fr-IRAS) and X-ray photoelectron spectroscopy (XPS) analysis. The results indicate that at high input power and low monomer-to-Ar ratio, low carbon and high nitrogen content films, stable and with a refractive index of 1.87, can be obtained. Under the same experimental conditions, high carbon content silicon carbonitride coatings have been deposited from hexamethyldisilazane and Ar fed discharges. (literal)
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