Er2O3 as a high-K dielectric candidate (Articolo in rivista)

Type
Label
  • Er2O3 as a high-K dielectric candidate (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2775084 (literal)
Alternative label
  • M. Losurdo, M.M. Giangregorio, G. Bruno, D.Yang, E.A. Irene, A.A. Suvorova, M. Saunders (2007)
    Er2O3 as a high-K dielectric candidate
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M. Losurdo, M.M. Giangregorio, G. Bruno, D.Yang, E.A. Irene, A.A. Suvorova, M. Saunders (literal)
Pagina inizio
  • 091914 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 91 (literal)
Rivista
Note
  • Scopu (literal)
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMIP (literal)
Titolo
  • Er2O3 as a high-K dielectric candidate (literal)
Abstract
  • Erbium oxide (Er2O3) films have been deposited by metal organic chemical vapor deposition on Si(001) using tris(isopropylcyclopentadienyl)erbium. The impact of Si surface passivation by the metal organic prior growth initiation was investigated. The correlation between the Er2O3 films structure, the optical response, the static dielectric constant (K), and density of interface traps is discussed. An Er-silicate interfacial layer with a thickness of 1.5 nm, a static dielectric constant of 10-12.4, and a density of interface traps of 4.2x10(10) cm(2) eV(-1) measured for a film with a physical thickness of 8.2 nm (with an equivalent oxide thickness of 2.7 nm) render Er2O3 an interesting candidate as a high-K dielectric. (literal)
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