Interaction of GaN Epitaxial Layers with Atomic Hydrogen (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Interaction of GaN Epitaxial Layers with Atomic Hydrogen (Articolo in rivista) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.apsusc.2004.05.152 (literal)

Alternative label

• M. Losurdo, M.M. Giangregorio, P. Capezzuto, G. Bruno, G. Namkoong, W.A. Dolittle, A.S.Brown (2004)
  Interaction of GaN Epitaxial Layers with Atomic Hydrogen
  in Applied surface science
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• M. Losurdo, M.M. Giangregorio, P. Capezzuto, G. Bruno, G. Namkoong, W.A. Dolittle, A.S.Brown (literal)

Pagina inizio

• 267 (literal)

Pagina fine

• 273 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 235 (literal)

Rivista

• Applied surface science (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMIP, Inst Inorgan Methodologies & Plasmas, I-70126 Bari, Italy [ 2 ] Georgia Inst Technol, Microelect Res Ctr, Atlanta, GA, Italy [ 3 ] Duke Univ, Dept Elect & Comp Engn, Durham, NC, Italy (literal)

Titolo

• Interaction of GaN Epitaxial Layers with Atomic Hydrogen (literal)

Abstract

• GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AIN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H-2 plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states. (literal)

Prodotto di

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)

Autore CNR

• PIO CAPEZZUTO (Persona)
• GIOVANNI BRUNO (Unità di personale interno)
• MARIA MICHELA GIANGREGORIO (Persona)
• MARIA LOSURDO (Unità di personale interno)

Incoming links:

Prodotto

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)

Autore CNR di

• GIOVANNI BRUNO (Unità di personale interno)
• MARIA LOSURDO (Unità di personale interno)
• MARIA MICHELA GIANGREGORIO (Persona)
• PIO CAPEZZUTO (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied surface science (Rivista)