Wet chemical treatment in hydrazine-sulfide solutions for sulfide and nitride monomolecular surface films on GaAs(100) (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Wet chemical treatment in hydrazine-sulfide solutions for sulfide and nitride monomolecular surface films on GaAs(100) (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1149/1.1878032 (literal)

Alternative label

• V L Berkovits , Ulin VP, Losurdo M, P.Capezzuto, G. Bruno (2005)
  Wet chemical treatment in hydrazine-sulfide solutions for sulfide and nitride monomolecular surface films on GaAs(100)
  in Journal of the Electrochemical Society
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• V L Berkovits , Ulin VP, Losurdo M, P.Capezzuto, G. Bruno (literal)

Pagina inizio

• 349 (literal)

Pagina fine

• 353 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 152 (literal)

Rivista

• Journal of the Electrochemical Society (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [ 1 ] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia [ 2 ] CNR, Ist Metodol Inorgan & Plasmi, I-70126 Bari, Italy [ 3 ] INSTM, I-70126 Bari, Italy (literal)

Titolo

• Wet chemical treatment in hydrazine-sulfide solutions for sulfide and nitride monomolecular surface films on GaAs(100) (literal)

Abstract

• GaAs surface chemical passivation by wet chemical treatments in hydrazine-sulfide solutions with different pH values has been studied by X-ray photoelectron spectroscopy and spectroscopic ellipsometry. It is found that highly alkaline (pH 12) solutions result in a coherent monomolecular film of gallium nitride, while treatment in buffered solutions (pH < 8) yields a surface layer of gallium sulfide. Both nitride and sulfide surface films are found to be stable against oxidation in air ambient over months, attesting to the validity of the wet chemical treatment in hydrazine sulfide solutions for chemical passivation of the GaAs(100) surface. The chemical mechanism for formation of the surface nitride and sulfide films is presented and discussed (literal)

Prodotto di

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)

Autore CNR

• GIOVANNI BRUNO (Unità di personale interno)
• PIO CAPEZZUTO (Persona)
• MARIA LOSURDO (Unità di personale interno)

Incoming links:

Prodotto

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)

Autore CNR di

• GIOVANNI BRUNO (Unità di personale interno)
• MARIA LOSURDO (Unità di personale interno)
• PIO CAPEZZUTO (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of the Electrochemical Society (Rivista)