Remote plasma asisted MOCVD growth of GaN on 4H-SiC: growth mode characterization exploiting ellipsometry (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Remote plasma asisted MOCVD growth of GaN on 4H-SiC: growth mode characterization exploiting ellipsometry (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1051/epjap:2005056 (literal)

Alternative label

• M. Losurdo, MM. Giangregorio, P. Capezzuto, G. Bruno (2005)
  Remote plasma asisted MOCVD growth of GaN on 4H-SiC: growth mode characterization exploiting ellipsometry
  in EPJ. Applied physics (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• M. Losurdo, MM. Giangregorio, P. Capezzuto, G. Bruno (literal)

Pagina inizio

• 159 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 31 (literal)

Rivista

• EPJ. Applied physics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [ 1 ] CNR, IMIP, Inst Inorgan Methodol & Plasmas, I-70126 Bari, Italy [ 2 ] INSTM UdR Bari, I-70126 Bari, Italy [ 3 ] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27709 USA (literal)

Titolo

• Remote plasma asisted MOCVD growth of GaN on 4H-SiC: growth mode characterization exploiting ellipsometry (literal)

Abstract

• GaN is grown on Si-face 4H-SiC(0001) substrates using remote plasma-assisted metalorganic chemical vapour deposition (RP-MOCVD). The pre-dissociation of nitrogen by the remote plasma is used for lowering the deposition temperature to approximately 700 degrees C. Remote plasma processing is also used for SiC surface pre-treatments including a low-temperature atomic hydrogen cleaning ( by remote H(2) plasma) and nitridation ( by remote N(2) plasma). Furthermore, in situ spectroscopic ellipsometry is used for monitoring in real time all the steps of substrate pre-treatments and the heteroepitaxial growth of GaN on SiC. Our characterization emphasis is on understanding the nucleation mechanism and the GaN growth mode, which depend on the SiC surface preparation. (literal)

Prodotto di

• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)
• Istituto di Nanotecnologia (NANOTEC) (Istituto)

Autore CNR

• MARIA MICHELA GIANGREGORIO (Persona)
• MARIA LOSURDO (Unità di personale interno)
• PIO CAPEZZUTO (Persona)
• GIOVANNI BRUNO (Unità di personale interno)

Incoming links:

Prodotto

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)

Autore CNR di

• GIOVANNI BRUNO (Unità di personale interno)
• MARIA LOSURDO (Unità di personale interno)
• MARIA MICHELA GIANGREGORIO (Persona)
• PIO CAPEZZUTO (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• EPJ. Applied physics (Rivista)