Nucleation and Growth mode of the molecular beam epitaxy of GaN on 4H-SiC exploiting real time spectroscopic ellipsometry (Articolo in rivista)

Type
Label
  • Nucleation and Growth mode of the molecular beam epitaxy of GaN on 4H-SiC exploiting real time spectroscopic ellipsometry (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.jcrysgro.2005.07.016 (literal)
Alternative label
  • M.Losurdo, G. Bruno, T.H. Kim, S. Choi, A. Brown, A. Moto (2005)
    Nucleation and Growth mode of the molecular beam epitaxy of GaN on 4H-SiC exploiting real time spectroscopic ellipsometry
    in Journal of crystal growth
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M.Losurdo, G. Bruno, T.H. Kim, S. Choi, A. Brown, A. Moto (literal)
Pagina inizio
  • 156 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 284 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] CNR, IMIP, Inst Inorgan Methodol & Plasmas, I-70126 Bari, Italy [ 2 ] INSTM, UdR Bari, Bari, Italy [ 3 ] Duke Univ, Dept Elect & Comp Engn, Res Triangle Pk, NC 27709 USA [ 4 ] Innovat Core SEI Inc, Santa Clara, CA 95051 USA (literal)
Titolo
  • Nucleation and Growth mode of the molecular beam epitaxy of GaN on 4H-SiC exploiting real time spectroscopic ellipsometry (literal)
Abstract
  • The heteroepitaxy of GaN directly grown directly on Si-face 4H-SiC(0 0 0 1) by molecular beam epitaxy is explored and characterized using in situ spectroscopic ellipsometry. Critical steps of the process, including SiC substrate cleaning, substrate termination through nitridation, GaN nucleation and growth, are monitored in real time. Some key relationships between growth mode, as observed by ellipsometry, and material properties are given. (c) 2005 Elsevier B.V. All rights reserved. (literal)
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