Plasma processing of the Si(0 0 1) surface for tuning SPR of Au/Si-based plasmonic nanostructures (Articolo in rivista)

Type
Label
  • Plasma processing of the Si(0 0 1) surface for tuning SPR of Au/Si-based plasmonic nanostructures (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.jlumin.2006.08.084 (literal)
Alternative label
  • M. M. Giangregorio, M. Losurdo, A. Sacchetti, P. Capezzuto, G. Bruno (2006)
    Plasma processing of the Si(0 0 1) surface for tuning SPR of Au/Si-based plasmonic nanostructures
    in Journal of luminescence
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M. M. Giangregorio, M. Losurdo, A. Sacchetti, P. Capezzuto, G. Bruno (literal)
Pagina inizio
  • 322 (literal)
Pagina fine
  • 326 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 121 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] CNR, Inst Inorgan Methodol & Plasmas, IMIP, Sez Bari, I-70125 Bari, Italy [ 2 ] INSTM, Sez Bari, I-70125 Bari, Italy (literal)
Titolo
  • Plasma processing of the Si(0 0 1) surface for tuning SPR of Au/Si-based plasmonic nanostructures (literal)
Abstract
  • An nanoclusters have been deposited on Si(0 0 1) surfaces by sputtering of a metallic An target using an Ar plasma. Different wet and dry treatments of the Si(0 0 1) surface, including dipping in HF solution and exposure to H-2 and N-2 plasmas, have been applied and the effects of these treatments on the An nanoparticles/Si interface, the An nanoclusters aspect ratio and the surface plasmon resonance (SPR) energy and amplitude are investigated exploiting spectroscopic ellipsometry and atomic force microscopy. It is found that the An nanoclusters aspect ratio depends on the extent of the Au-Si intermixing. The thicker the Au-Si interface layer, the larger the An nanoparticles aspect ratio and the red-shift of the SPR peak. Furthermore, SiO2 and the H-2 plasma treatment inhibit the Si-Au intermixing, while HF-dipping and the N-2 plasma treatment favour Au-Si intermixing, yielding silicide formation which increases the Si wetting by Au. (literal)
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