Dynamics of low temperature PECVD growth of microcristalline silicon thin films: impact of substrate surface treatments (Articolo in rivista)

Type
Label
  • Dynamics of low temperature PECVD growth of microcristalline silicon thin films: impact of substrate surface treatments (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.noncrysol.2005.09.039 (literal)
Alternative label
  • M. Losurdo, M.M. Giangregorio, A. Sacchetti, P. Capezzuto, G. Bruno, J. Carabe, J.J. Gandia, L. Urbina (2006)
    Dynamics of low temperature PECVD growth of microcristalline silicon thin films: impact of substrate surface treatments
    in Journal of non-crystalline solids
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M. Losurdo, M.M. Giangregorio, A. Sacchetti, P. Capezzuto, G. Bruno, J. Carabe, J.J. Gandia, L. Urbina (literal)
Pagina inizio
  • 906 (literal)
Pagina fine
  • 910 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 352 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] CNR, IMIP, Inst Inorgan Methodol & Plasmas, I-70126 Bari, Italy [ 2 ] CIEMAT, E-28040 Madrid, Spain (literal)
Titolo
  • Dynamics of low temperature PECVD growth of microcristalline silicon thin films: impact of substrate surface treatments (literal)
Abstract
  • Microcrystalline silicon (mu c-Si) films have been deposited on polyimide, Corning glass and c-Si(001) by rf plasma-enhanced chemical vapour deposition (PECVD) using both SiF4-H-2 and SiH4-H-2 plasmas. The effect of substrate pre-treatment using SiF4-He and H-2 plasmas on the nucleation of crystallites is investigated. Real-time laser reflectance interferometry monitoring (LRI) revealed the existence of a 'crystalline seeding time' that strongly impacts on the crystallite nucleation, on the structural quality of the substrate/mu c-Si interface and on film microstructure. It is found that SiF4-He pre-treatment of substrates is effective in suppressing porous and amorphous interface layer at the early nucleation stage of crystallites, resulting in direct deposition of mu c-Si films also on polyimide at the temperature of 120 degrees C. (literal)
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