Correlation between structure and optical properties of Si-based alloys deposited by PECVD (Articolo in rivista)

Type
Label
  • Correlation between structure and optical properties of Si-based alloys deposited by PECVD (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.tsf.2005.11.098 (literal)
Alternative label
  • M.M. Giangregorio, M. Losurdo, A. Sacchetti, P. Capezzuto, G. Bruno (2006)
    Correlation between structure and optical properties of Si-based alloys deposited by PECVD
    in Thin solid films (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M.M. Giangregorio, M. Losurdo, A. Sacchetti, P. Capezzuto, G. Bruno (literal)
Pagina inizio
  • 598 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 511/2 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] CNR, Inst Inorgan Methodol & Plasmas, IMIP, I-70126 Bari, Italy [ 2 ] INSTM UdR Bari, I-70126 Bari, Italy (literal)
Titolo
  • Correlation between structure and optical properties of Si-based alloys deposited by PECVD (literal)
Abstract
  • Si-based thin films, including mu c-Si, Si1-xGex and Si1-xCx alloys, have been deposited by plasma enhanced chemical vapor deposition (PECVD) using SiF4:H-2:He, SiF4:GeH4:H-2 and SiF4:CH4:H-2 plasmas, respectively. When SiF4 is used as Si-precursor, it is found that a low flux of CH4 or GcH(4) results in incorporation of C and Ge in alloys as high as 30%. Correlations between microstructure and optical properties of films are investigated using spectroscopic ellipsometry. The role of fluorine atoms in the growth chemistry and material microstructure is discussed. (literal)
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