http://www.cnr.it/ontology/cnr/individuo/prodotto/ID33845
Buffer Free MOCVD Growth of GaN on 4H-SiC: Effect of Substrate Treatments and UV-Photoirradiation (Articolo in rivista)
- Type
- Label
- Buffer Free MOCVD Growth of GaN on 4H-SiC: Effect of Substrate Treatments and UV-Photoirradiation (Articolo in rivista) (literal)
- Anno
- 2006-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1002/pssa.200565154 (literal)
- Alternative label
M. Losurdo, M.M. Giangregorio, G. Bruno T-H Kim, S. Choi1, P. Wu, A. Brown (2006)
Buffer Free MOCVD Growth of GaN on 4H-SiC: Effect of Substrate Treatments and UV-Photoirradiation
in Physica status solidi. A, Applied research
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- M. Losurdo, M.M. Giangregorio, G. Bruno T-H Kim, S. Choi1, P. Wu, A. Brown (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- [ 1 ] CNR, IMIP, Inst Inorgan Methodol & Plasmas, I-70126 Bari, Italy
[ 2 ] INSTM UdR Bari, I-70126 Bari, Italy
[ 3 ] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27709 USA (literal)
- Titolo
- Buffer Free MOCVD Growth of GaN on 4H-SiC: Effect of Substrate Treatments and UV-Photoirradiation (literal)
- Abstract
- GaN has been grown directly on the Si-face 4H-SiC(0001) substrates using remote plasma-assisted metal-organic chemical vapour deposition (RP-MOCVD) with UV-light irradiation. The effects of substrate pre-treatments and UV-photoirradiation of the growth surface on GaN nucleation and film morphology are investigated. Optical data from spectroscopic ellipsometry measurements and morphological data show an improvement in nucleation and material quality with UV-light irradiation. (literal)
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- Autore CNR
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