Modification of InN Properties by Interactions with Hydrogen and Nitrogen (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Modification of InN Properties by Interactions with Hydrogen and Nitrogen (Articolo in rivista) (literal)

Anno

• 2006-01-01T00:00:00+01:00 (literal)

Alternative label

• M. Losurdo, M. M. Giangregorio, G. Bruno, T.H. Kim, P. Wu, S. Choi, M. Morse, A.S. Brown (2006)
  Modification of InN Properties by Interactions with Hydrogen and Nitrogen
  in Materials Research Society symposia proceedings
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• M. Losurdo, M. M. Giangregorio, G. Bruno, T.H. Kim, P. Wu, S. Choi, M. Morse, A.S. Brown (literal)

Pagina inizio

• 3 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 892 (literal)

Rivista

• Materials Research Society symposia proceedings (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMIP, Via Orabona 4, I-70126 Bari, Italy (literal)

Titolo

• Modification of InN Properties by Interactions with Hydrogen and Nitrogen (literal)

Abstract

• he interaction of InN epitaxial films grown by r.f. plasma assisted molecular beam epitaxy with atomic hydrogen and nitrogen, produced by remote r.f. H-2 and N-2 plasmas, is investigated. InN strongly reacts with both atomic hydrogen and nitrogen yielding depletion of nitrogen and concurrent formation of In droplets at the film surface. The impact of hydrogen treatments on the optical properties of InN is assessed using photoluminescence (PL). It is found that hydrogen suppresses, the intense PL band peaked at approximately 0.7eV for the as-grown InN epitaxial layers, and yields a new PL band with a peak energy and intensity that increase with H-dose. The effect of exposure to atomic hydrogen and nitrogen on electrical properties of InN is investigated using Hall measurements. Atomic force microscopy is also used for studying the morphological changes of InN upon interaction with atomic. hydrogen and nitrogen. (literal)

Prodotto di

• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)
• Istituto di Nanotecnologia (NANOTEC) (Istituto)

Autore CNR

• MARIA LOSURDO (Unità di personale interno)
• GIOVANNI BRUNO (Unità di personale interno)
• MARIA MICHELA GIANGREGORIO (Persona)

Incoming links:

Prodotto

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)

Autore CNR di

• GIOVANNI BRUNO (Unità di personale interno)
• MARIA LOSURDO (Unità di personale interno)
• MARIA MICHELA GIANGREGORIO (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials Research Society symposia proceedings (Rivista)