Dielectric function and electric properties of germanium thin films prepared by gold mediated crystallization (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Dielectric function and electric properties of germanium thin films prepared by gold mediated crystallization (Articolo in rivista) (literal)

Anno

• 2006-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.2180407 (literal)

Alternative label

• M.M. Giangregorio, M. Losurdo, M. Ambrico, P. Capezzuto, and G. Bruno, L.Tapfer (2006)
  Dielectric function and electric properties of germanium thin films prepared by gold mediated crystallization
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• M.M. Giangregorio, M. Losurdo, M. Ambrico, P. Capezzuto, and G. Bruno, L.Tapfer (literal)

Pagina inizio

• 1 (literal)

Pagina fine

• 7 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 99 (literal)

Rivista

• Journal of applied physics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMIP, I-70126 Bari, Italy [ 2 ] INSTM, Sez Bari, I-70126 Bari, Italy [ 3 ] UTS, MAT, ENEA, Ctr Ric Brindisi, I-72100 Brindisi, Italy (literal)

Titolo

• Dielectric function and electric properties of germanium thin films prepared by gold mediated crystallization (literal)

Abstract

• Crystallization of hydrogenated amorphous germanium (a-Ge:H) thin films deposited by plasma enhanced chemical vapor deposition using the GeH4 and H-2 precursors has been investigated. A comparative analysis of the kinetics of the thermal crystallization by annealing to 650 degrees C and of the gold-mediated crystallization (Au-MMC) is carried out. The impact of the Au-MMC on the microcrystalline Ge film microstructure and electrical properties is discussed. The Au thin layer results in a more dense and ordered structure with lower roughness of the microcrystalline Ge films. In order to describe the Ge crystallization kinetics, the dielectric functions of a-Ge:H and microcrystalline germanium mu c-Ge have also been determined by spectroscopic ellipsometry in the range of 0.75-6.0 eV and parametrized using the Tauc-Lorentz dispersion equation. (literal)

Prodotto di

• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)
• Istituto di Nanotecnologia (NANOTEC) (Istituto)

Autore CNR

• MARIA MICHELA GIANGREGORIO (Persona)
• GIOVANNI BRUNO (Unità di personale interno)
• MARIANNA AMBRICO (Persona)
• MARIA LOSURDO (Unità di personale interno)
• PIO CAPEZZUTO (Persona)

Incoming links:

Prodotto

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)

Autore CNR di

• GIOVANNI BRUNO (Unità di personale interno)
• MARIA LOSURDO (Unità di personale interno)
• MARIANNA AMBRICO (Persona)
• MARIA MICHELA GIANGREGORIO (Persona)
• PIO CAPEZZUTO (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)