The role of the sapphire nitridation temperature on the gan growth by Plasma-assisted Molecular Beam epitaxy: Part I (Articolo in rivista)

Type
Label
  • The role of the sapphire nitridation temperature on the gan growth by Plasma-assisted Molecular Beam epitaxy: Part I (Articolo in rivista) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.1435834 (literal)
Alternative label
  • Namkoong G.(1), Doolittle W.A.(1), Brown A.S.(1), Losurdo M.(2), Capezzuto P.(2), Bruno G.(2) (2002)
    The role of the sapphire nitridation temperature on the gan growth by Plasma-assisted Molecular Beam epitaxy: Part I
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Namkoong G.(1), Doolittle W.A.(1), Brown A.S.(1), Losurdo M.(2), Capezzuto P.(2), Bruno G.(2) (literal)
Pagina inizio
  • 2499 (literal)
Pagina fine
  • 2507 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • This paper brings together international expertise from chemistry (IMIP-CNR, Italy), physics (Georgia Institute of Technology, USA) and electrical engineering (Duke University, USA).This collaboration, has been straighten very recently and a research contract has been signed by one of the authors M. Losurdo with Duke University, NC USA where prof A.S. Brown moved IMPACT FACTOR=2.281 (literal)
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  • 91 (literal)
Rivista
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  • This paper represents significant advances in the knowledge of chemical processes involved in the growth of GaN epitaxial films. Results presented in this paper are referenced by many research groups involved in GaN technology. The results are technologically innovative and rest on major advancement in the fundamental understanding of GaN epitaxy. (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • (1) Georgia Institute of Technology, USA (2) IMIP-CNR, sez. Bari (literal)
Titolo
  • The role of the sapphire nitridation temperature on the gan growth by Plasma-assisted Molecular Beam epitaxy: Part I (literal)
Abstract
  • The impact of the nitridation temperature on sapphire/GaN interface modifications and the structural, chemical, and optical properties of GaN epitaxial thin films with N plasma radicals is investigated. Based on ex situ spectroscopic ellipsometry and x-ray photoelectron spectroscopy analysis, it is found that the sapphire nitridation chemistry,specifically AlN versus oxynitride (NO)production, depends on the surface temperature. Nitridation at 200 °C produces a very thin AlN layer with 90% coverage, while high temperature nitridation leads to a 70% coverage of AlN layer containing NO. These initial stages of growth significantly impact the characteristics of the layers following the nitridation step, specifically the low temperature buffer, annealed buffer, and the GaN epitaxial layer. The annealed buffer on a 200 °C nitridation provides a homogeneous GaN thin layer covering most of the sapphire surface. This homogeneous GaN layer after annealing produces a superior template for subsequent growth, resulting in improved structural and optical properties of GaN epitaxial films. On the other hand, the annealed buffer grown on sapphire nitrided at temperatures lower or higher than 200 °C, has islands of GaN nuclei revealing the sapphire substrate, and ultimately, resulting in degraded GaN epitaxial film quality as demonstrated by photoluminescence and x-ray diffraction measurements. The results can be traced back to the chemistry of the nitridation process. © 2002 American Institute of Physics.@DOI: 10.1063/1.1435834# (literal)
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