N2-H2 Remote Plasma Nitridation for GaAs passivation (Articolo in rivista)

Type
Label
  • N2-H2 Remote Plasma Nitridation for GaAs passivation (Articolo in rivista) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.1490414 (literal)
Alternative label
  • Losurdo M.(1), Capezzuto P.(1), Bruno G.(1), Perna G.(2), Capozzi V.(2) (2002)
    N2-H2 Remote Plasma Nitridation for GaAs passivation
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Losurdo M.(1), Capezzuto P.(1), Bruno G.(1), Perna G.(2), Capozzi V.(2) (literal)
Pagina inizio
  • 16 (literal)
Pagina fine
  • 18 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • This work is an important part of the activity on semiconductor surface passivation. In this field one of the author GB held the plenary lectures at ”, III Inter. Workshop on Semic. Surf. Passivation, SSP’2003, Ustron, Poland, Sept. 14-17, 2003. IMPACT FACTOR=4.207 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 81 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto
  • This paper presents a new dry procedure for effective cleaning and passivation of GaAs surfaces. It is a result of high technological importance to GaAs based microelectronics because GaAs surface usually covered by non stoichiometric native oxides with segregated As at GaAs/oxide interface. (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • (1)IMIP-CNR,sez. Bari (2)Dept of Physics, Univ Bari (literal)
Titolo
  • N2-H2 Remote Plasma Nitridation for GaAs passivation (literal)
Abstract
  • A remote N2–H2 (a mixture of 97% N2–3% H2) rf plasma nitridation procedure has been developed to form a very thin (5Å) GaN layer successful in the electronic and chemical passivation of GaAs (100) surfaces. The interaction of the plasma with the GaAs surface has been controlled in situ and in real time by spectroscopic ellipsometry. By x-ray photoelectron spectroscopy, the composition of the passivating layer obtained by N2–H2 plasmas is found to be GaN. This makes the N2–H2 (a mixture of 97% N2–3% H2) nitridation completely different from the pure N2 nitridation which, in contrast, does not provide GaAs passivation, because the formation of GauN bonds accompanies with AsN and the segregation of elemental As at the GaN/GaAs interface. The stability of the chemical and electronic passivation is demonstrated by the nonoxidation and by the nondecaying behaviour of the photoluminescence efficiency of the GaAs passivated surface over months of air exposure. © 2002 American Institute of Physics. @DOI: 10.1063/1.1490414# (literal)
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