Modifications of c-Si/a-Si:H/ITO heterostructures upon thermal annealing (Articolo in rivista)

Type
Label
  • Modifications of c-Si/a-Si:H/ITO heterostructures upon thermal annealing (Articolo in rivista) (literal)
Anno
  • 2001-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.1413487 (literal)
Alternative label
  • Losurdo M .(1),Giangregorio M.(1), Capezzuto P.(1), Bruno G.(1), Varsano F.(2), Tucci M.(2), Roca F(2) (2001)
    Modifications of c-Si/a-Si:H/ITO heterostructures upon thermal annealing
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Losurdo M .(1),Giangregorio M.(1), Capezzuto P.(1), Bruno G.(1), Varsano F.(2), Tucci M.(2), Roca F(2) (literal)
Pagina inizio
  • 6502 (literal)
Pagina fine
  • 6512 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • Some of the arguments in this manuscript are also developed and discussed within the 5th Framework European Network ASINET (Amorphous Silicon Network) whose IMIP-Unit is led by G. Bruno. IMPACT FACTOR=2.281 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 90 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto
  • This paper presents the scientific work developed in the field of silicon thin film deposited by PECVD, which was part of a research contract signed by Dr. G. Bruno with ENEA. This manuscript represents advancement in understanding and controlling interface reactions occurring in silicon-based heterostructures used for photovoltaic solar cells. This is subject is of high importance to the photovoltaic community in Europe. The argument is a central one in the field since the efficiency of the PV cells is strictly related to the damage by hydrogen atoms at interfaces. (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • (1) IMIP-CNR sez. Bari (2) ENEA (literal)
Titolo
  • Modifications of c-Si/a-Si:H/ITO heterostructures upon thermal annealing (literal)
Abstract
  • c-Si/a-Si:H/indium tin oxide ~ITO! heterojunctions have been prepared by electron-beam deposition of an ~ITO! thin film on a plasma enhanced chemical vapor deposition grown c-Si/a-Si:H heterojunction. These heterostructures, which are the basis of solar cells, have been annealed in N 2 atmosphere at temperatures in the range 250–650 °C. Thermal annealing effects on structural and optical properties of the ITO, the a-Si:H layer, and of the c-Si/a-Si interface have been detected by spectroscopic ellipsometry. The optical response of ITO is described in the energy range 1.5–5.0 eV, where a high transparency is required for ITO, by analyzing ellipsometric spectra in terms of a model which combines the Drude model and a double Lorentzian oscillator. Spectroscopic ellipsometry has shown that annealing at T.450 °C causes hydrogen out-diffusion from the a-Si:H layer into the ITO layer whose optical and electrical properties are modified. Additionally, damage of the c-Si/a-Si interface and of the ITO layer by hydrogen diffusion is detected and seen as a factor affecting performance of c-Si/a-Si/ITO stacked structure based solar cells. X-ray photoelectron spectroscopy and atomic force microscopy measurements have corroborated ellipsometric analysis. © 2001 American Institute of Physics. @DOI: 10.1063/1.1413487# (literal)
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