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The impact of Substrate Nitridation Temperature and Buffer Design and synthesis on the polarity of GaN Epitaxial films (Articolo in rivista)
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- Label
- The impact of Substrate Nitridation Temperature and Buffer Design and synthesis on the polarity of GaN Epitaxial films (Articolo in rivista) (literal)
- Anno
- 2003-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/S0022-0248(03)00953-9 (literal)
- Alternative label
G. Namkoong, W.A. Doolittle, A.S. Brown, M. Losurdo, M.M. Giangregorio, P. Capezzuto, G. Bruno (2003)
The impact of Substrate Nitridation Temperature and Buffer Design and synthesis on the polarity of GaN Epitaxial films
in Journal of crystal growth
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- G. Namkoong, W.A. Doolittle, A.S. Brown, M. Losurdo, M.M. Giangregorio, P. Capezzuto, G. Bruno (literal)
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- [ 1 ] Georgia Inst Technol, Microelect Res Ctr, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[ 2 ] CNR, IMIP, I-70126 Bari, Italy
[ 3 ] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27706 US (literal)
- Titolo
- The impact of Substrate Nitridation Temperature and Buffer Design and synthesis on the polarity of GaN Epitaxial films (literal)
- Abstract
- The polarity of GaN epitaxial layers grown on GaN and AlN buffer layers was investigated and found to be dependent on nitridation temperature over the range of 200 700 C.When low temperature (LT),500 C,GaN buffer layers are used,GaN epitaxial layers grown on 200 C nitrided sapphire have a higher density of N-polar inversion domains.However,a high density of dislocation pits was observed on GaN epitaxial layers based on AFM morphology when GaN epitaxial layers were grown on LT GaN buffer of 700 C nitrided sapphire substrate.With high temperature (HT),850 C,AlN buffer layers,the density of N-polar inversion domains in GaN epitaxial layers depends on the thickness of AlN buffer layer.The structural quality of Ga-polar GaN epitaxial layer is dramatically improved when LT GaN and HT AlN buffer layers are combined with an optimized annealing time.The measured full-widths at half- maximum of (0 0 0 2)symmetric and (1 0 .4)asymmetric re .ections are 68 and 246 arcsec,respectively,for 1.0 m GaN epitaxial layers.The results presented here can be implemented to produce low dislocation density,single Ga-polar GaN epitaxial layers.
r 2003 Elsevier Science B.V.All rights reserved.
PACS: 61.14.Hg;68.37.Ps;81.15.Hi;81.05.Ea
Keywords: A1.Atomic force microscopy;A1.Polarity;A3.Molecular beam epitaxy;B1.Nitrides (literal)
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