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Effects of hydrogen implantation temperature on InP surface blistering (Articolo in rivista)

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Effects of hydrogen implantation temperature on InP surface blistering (Articolo in rivista) (literal)

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Chen, P. (1); Di, Z.F. (2); Nastasi, M. (2); Bruno, E. (3); Grimaldi, M.G. (3); Theodore, N.D. (4); Lau, S.S. (1) (2008)
Effects of hydrogen implantation temperature on InP surface blistering
in Applied physics letters; American Institute Of Physics (AIP), Melville (Stati Uniti d'America)
(literal)

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Chen, P. (1); Di, Z.F. (2); Nastasi, M. (2); Bruno, E. (3); Grimaldi, M.G. (3); Theodore, N.D. (4); Lau, S.S. (1) (literal)

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(1)Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093, USA; (2) Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA; (3) MATIS-CNR-INFM and Dipartimento di Fisica ed Astronomia, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy; (4) Analog and Mixed-Signal Technologies, Freescale Semiconductor Inc., Tempe, Arizona 85284, USA (literal)

Titolo

Effects of hydrogen implantation temperature on InP surface blistering (literal)

Abstract

We have investigated the effects of hydrogen implantation temperature on the ion-cut process of InP by examining the correlation between surface blistering and the ion induced damage, hydrogen distribution, and strain. Using Rutherford backscattering spectrometry, elastic recoil detection, and x-ray diffraction, it was found that both the point defects induced by the hydrogen implantation and the in-plane compressive stress were necessary for hydrogen trapping and H-platelet nucleation and growth. The control of implantation temperature is crucial for creating sufficient defects and strain to induce surface blistering or layer exfoliation. (C) 2008 American Institute of Physics. (literal)

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