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Titanium nitride thin films deposited by reactive pulsed laser ablation in RF plasma (Articolo in rivista)
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- Titanium nitride thin films deposited by reactive pulsed laser ablation in RF plasma (Articolo in rivista) (literal)
- Anno
- 2002-01-01T00:00:00+01:00 (literal)
- Alternative label
Giardini A., Marotta V., Orlando S., Parisi G.P. (2002)
Titanium nitride thin films deposited by reactive pulsed laser ablation in RF plasma
in Surface & coatings technology; ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi)
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- Giardini A., Marotta V., Orlando S., Parisi G.P. (literal)
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- Titolo
- Titanium nitride thin films deposited by reactive pulsed laser ablation in RF plasma (literal)
- Abstract
- Titanium nitride thin films were deposited on Si (100) substrates by
pulsed laser ablation of a titanium target in a N-2, atmosphere (gas
pressure approx. 10 Pa) using a doubled frequency Nd:YAG laser (532 nm)
also assisted by a 13.56-MHz radio frequency (RF) plasma. Deposition was
carried out at various substrate temperatures ranging from 373 up to 873 K
and films were analyzed by X-ray diffractometry, scanning electron
microscopy and optical emission spectroscopy. A comparison between
the 'normal' pulsed laser deposition (PLD) and the RF plasma-assisted PLD
showed the influence of the plasma on the structural characteristics of
the thin films. (literal)
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