http://www.cnr.it/ontology/cnr/individuo/prodotto/ID3337

Ambipolar transport in transparent and flexible all-organic heterojunction field effect transistors at ambient conditions (Articolo in rivista)

Type

Prodotto della ricerca (Classe)
Articolo in rivista (Classe)

Label

Ambipolar transport in transparent and flexible all-organic heterojunction field effect transistors at ambient conditions (Articolo in rivista) (literal)

Anno

2008-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

10.1016/j.orgel.2007.10.011 (literal)

Alternative label

Cosseddu, P; Bonfiglio, A; Salzmann, I; Rabe, JP; Koch, N (2008)
Ambipolar transport in transparent and flexible all-organic heterojunction field effect transistors at ambient conditions
in Organic electronics (Print)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Cosseddu, P; Bonfiglio, A; Salzmann, I; Rabe, JP; Koch, N (literal)

Pagina inizio

191 (literal)

Pagina fine

197 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

9 (literal)

Rivista

Organic electronics (Rivista)

Note

ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

\"[Cosseddu, P.; Bonfiglio, A.] INFM Univ Cagliari, Dept Elect & Elect Engn, I-09123 Cagliari, Italy; [Cosseddu, P.; Bonfiglio, A.] CNR INFM S3 Nanostruct & BioSyst Surfaces, I-41100 Modena, Italy; [Salzmann, I.; Rabe, J. P.; Koch, N.] Humboldt Univ, Inst Phys, D-12489 Berlin, Germany (literal)

Titolo

Ambipolar transport in transparent and flexible all-organic heterojunction field effect transistors at ambient conditions (literal)

Abstract

We report on the realization of fully flexible and transparent n-type and ambipolar all-organic OFETs. A double layer, pentacene-C60 heterojunction, was used as the semiconductor layer. The contacts were made with poly(ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS) and patterned by means of Soft Lithography MicroContact Printing (mu CP). Interestingly, as demonstrated by atomic force microscopy and X-ray diffraction investigations, growing C60 on a pre-deposited pentacene buffer layer leads to a clear improvement in the morphology and crystallinity of the deposited film allowing to obtain n-type conduction despite the very high electron injection barrier at the interface between PEDOT:PSS and C60. As a result, it was possible to realize n-type and ambipolar all-organic OFETs by optimizing the thicknesses of the pentacene buffer layer. All devices, measured in air, worked in accumulation mode with mobilities up to 1 x 10(-2) cm(2)/V S and 3.5 x 10(-4) cm(2)/V s for p-type and n-type regimes, respectively. This is particularly interesting because it demonstrates, also for n-type and ambipolar transistors, the possibility of avoiding problems normally associated to metal contacts: the lack of mechanical robustness, flexibility, and the unfeasibility of realizing contacts with low cost techniques like printing or soft lithography. These results confirm the importance of the substrate properties for the ordered growth of organic semiconductors, which determines the transport properties of organic materials. (c) 2007 Elsevier B.V. All rights reserved. (literal)

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