High-resolution X-ray diffraction by end of range defects in self-amorphized Ge (Articolo in rivista)

Type
Label
  • High-resolution X-ray diffraction by end of range defects in self-amorphized Ge (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Alternative label
  • Bisognin, G; Vangelista, S; Bruno, E (2008)
    High-resolution X-ray diffraction by end of range defects in self-amorphized Ge
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Bisognin, G; Vangelista, S; Bruno, E (literal)
Pagina inizio
  • 64 (literal)
Pagina fine
  • 67 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 154 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • \"[Bisognin, G.] CNR INFM MATIS, I-35131 Padua, Italy; [Bisognin, G.; Vangelista, S.] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy; [Bruno, E.] CNR INFM MATIS, I-35131 Padua, Italy (literal)
Titolo
  • High-resolution X-ray diffraction by end of range defects in self-amorphized Ge (literal)
Abstract
  • In this study we detected the positive perpendicular strain (E-L) due to end of range (EOR) defects formed in Ge amorphized with 300 keV, 2.5 x 10(15) Ge/cm(2) at liquid nitrogen temperature by means of high-resolution X-ray diffraction. We found that, after complete solid phase epitaxial recrystallization of the amorphous layer (about 1 h at 340 degrees C), only 2% of the original epsilon(perpendicular to) survives. This strain completely disappears after 270 min at 405 degrees C. On the other hand, after this more aggressive annealing. a thin negatively strained layer appears just below the surface. The whole set of data is discussed and compared with existing literature. (C) 2008 Elsevier B.V. All rights reserved. (literal)
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