http://www.cnr.it/ontology/cnr/individuo/prodotto/ID32925
Tc=21K in epitaxial FeSe0.5Te0.5 thin films with biaxial compressive strain (Articolo in rivista)
- Type
- Label
- Tc=21K in epitaxial FeSe0.5Te0.5 thin films with biaxial compressive strain (Articolo in rivista) (literal)
- Anno
- 2010-01-01T00:00:00+01:00 (literal)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Bellingeri E.; Pallecchi I.; Buzio R.; Gerbi A.; Marrè D.; Cimberle M.; Tropeano M.; Putti M.; Palenzona A.; Ferdeghini C. (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
- In: Applied Physics Letters, vol. 96 article n. 102512. AIP, 2010. (literal)
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- CNR-SPIN, CNR-SPIN e Dipartimento di Fisica di Genova, CNR-IMEM, Genova, CNR-SPIN e Dipartimento di Chimica di Genova (literal)
- Titolo
- Tc=21K in epitaxial FeSe0.5Te0.5 thin films with biaxial compressive strain (literal)
- Abstract
- High purity epitaxial FeSe0.5Te0.5 thin films with different thickness were grown by Pulsed Laser Ablation on different substrates. By varying the film thickness, Tc up to 21K were observed, significantly larger than the bulk value. Structural analyses indicated that the a axis changes significantly with the film thickness and is linearly related to the Tc. The latter result indicates the important role of the compressive strain in enhancing Tc. Tc is also related to both the Fe-(Se,Te) bond length and angle, suggesting the possibility of further enhancement. (literal)
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