TEM and SEM-CL studies of SiC Nanowires (Articolo in rivista)

Type
Label
  • TEM and SEM-CL studies of SiC Nanowires (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Alternative label
  • Rossi F.; Fabbri F.; Attolini G.; Bosi M.; Watts B. E.; Salviati G. (2010)
    TEM and SEM-CL studies of SiC Nanowires
    in Materials science forum
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Rossi F.; Fabbri F.; Attolini G.; Bosi M.; Watts B. E.; Salviati G. (literal)
Pagina inizio
  • 387 (literal)
Pagina fine
  • 390 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 645-6 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • In: Materials Science Forum, vol. 645-648 pp. 387 - 390. Trans Tech Publications, Switzerland, 2010. (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMEM, Parma (literal)
Titolo
  • TEM and SEM-CL studies of SiC Nanowires (literal)
Abstract
  • Beta-SiC and beta-SiC/SiO2 core-shell nanowires (NWs) grown on silicon substrates by three different processes, based on the use of i) carbon monoxide, ii) silane with propane and iii) carbon tetrachloride precursors, are analysed by structural and optical techniques. Spectroscopic cathodoluminescence studies show a luminescence enhancement in core-shell structures, ascribed to an effective role of the shell as both carrier injecting barrier and passivation layer. In NWs grown using CCl4 precursor, a peculiar luminescence with dominant red component at about 2 eV has been detected and ascribed to point defects related to an unintentional oxygen incorporation. (literal)
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