Room Temperature Strong Infra-Red Light Emission of Boron Doped Silicon Nanowires (Articolo in rivista)

Type
Label
  • Room Temperature Strong Infra-Red Light Emission of Boron Doped Silicon Nanowires (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1017/S1431927610059726 (literal)
Alternative label
  • Fabbri F.; Lazzarini L.; Salviati G.; Fukata N. (2010)
    Room Temperature Strong Infra-Red Light Emission of Boron Doped Silicon Nanowires
    in Microscopy and microanalysis (Print); Cambridge University Press, Cambridge (Regno Unito)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Fabbri F.; Lazzarini L.; Salviati G.; Fukata N. (literal)
Pagina inizio
  • 824 (literal)
Pagina fine
  • 825 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 - August 5, 2010 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://journals.cambridge.org/article_S1431927610059726 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 16 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • In: Microscopy and Microanalysis, vol. 16 (2) p. 824. Microscopy Society of America, 2010. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMEM, Parma, Italy; NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan (literal)
Titolo
  • Room Temperature Strong Infra-Red Light Emission of Boron Doped Silicon Nanowires (literal)
Abstract
  • Silicon nanowires (Si-NWs) are promising for different fields of science such as sensing applications and nano-electronics. The possibility of having strong light emission from these nanostructures can open new scenario in optoelectronics, in telecommunication engineering and also in the possible integration with commercial silicon based electronics. The homogeneous doping along the NWs represents a key milestone for a variety of electronic and optoelectronic devices. In this work we present the evidence of deep infra-red emission of boron doped Si-NWs at room temperature studied by cathodoluminescence spectroscopy. A throughout correlation with structural characterization is carried out in order to identify the origin of this strong emission. (literal)
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