Pd-Assisted Growth of InAs Nanowires (Articolo in rivista)

Type
Label
  • Pd-Assisted Growth of InAs Nanowires (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1021/cg1008335 (literal)
Alternative label
  • Heun S. a; Radha B. b; Ercolani D. a; Kulkarni G. b; Rossi F. c; Grillo V. cd; Salviati G. c; Beltram F. a; Sorba L. a (2010)
    Pd-Assisted Growth of InAs Nanowires
    in Crystal growth & design; ACS, American chemical society, Washington, DC (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Heun S. a; Radha B. b; Ercolani D. a; Kulkarni G. b; Rossi F. c; Grillo V. cd; Salviati G. c; Beltram F. a; Sorba L. a (literal)
Pagina inizio
  • 4197 (literal)
Pagina fine
  • 4202 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://pubs.acs.org/journal/cgdefu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 10 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • In: Crystal Growth & Design, vol. 10 (9) pp. 4197 - 4202. American Chemical Society, 2010. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 9 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • a NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Pisa, Italy; b Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore, India; c CNR-IMEM, Parma, Italy; d CNR-INFM, Modena - S3, Italy (literal)
Titolo
  • Pd-Assisted Growth of InAs Nanowires (literal)
Abstract
  • We report the Pd-assisted chemical beam epitaxy growth of zinc blende InAs nanowires which are grown on InAs(111)A substrates by employing Pd octane and hexadecyl thiolates as catalyst precursors. The structural properties of these nanowires are investigated by scanning and transmission electron microscopy. Furthermore, we demostrate the growth of InAs nanowires on patterned substrates by employing the Pd hexadecylthiolate precursors as a direct-write resist in electron beam lithography. (literal)
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