CBr4 as precursor for VPE growth of cubic silicon carbide (Articolo in rivista)

Type
Label
  • CBr4 as precursor for VPE growth of cubic silicon carbide (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Alternative label
  • Watts B. E.; Bosi M.; Attolini G.; Battistig G.; Dobos L.; Pècz B. (2010)
    CBr4 as precursor for VPE growth of cubic silicon carbide
    in Crystal research and technology (1981)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Watts B. E.; Bosi M.; Attolini G.; Battistig G.; Dobos L.; Pècz B. (literal)
Pagina inizio
  • 583 (literal)
Pagina fine
  • 588 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 45 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • In: Crystal Research and Technology, vol. 45 (6) pp. 583 - 588. Wiley, 2010. (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMEM, Parma, Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Budapest, Hungary (literal)
Titolo
  • CBr4 as precursor for VPE growth of cubic silicon carbide (literal)
Abstract
  • This work presents a study of carbon tetrabromide (CBr4) as precursor to deposit 3C-SiC on (001) and (111) Si by VPE technique at temperatures ranging between 1000 °C and 1250 °C. TEM, AFM and SEM results indicate that the epitaxy proceeds as a 3D growth of uncoalesced islands at low temperature, whereas a continuous crystalline layer with hillocks on top is obtained above 1200 °C. The hillocks observed at high temperature appear well faceted and their shape and orientation are analyzed in detail by AFM, showing a {311} preferred orientation. 3D island growth was suppressed by adding C3H8 to the precursor gases. (literal)
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