http://www.cnr.it/ontology/cnr/individuo/prodotto/ID32878

Structural, electrical and optical characterization of InGaN layers grown by MOVPE (Articolo in rivista)

Type

Label

Structural, electrical and optical characterization of InGaN layers grown by MOVPE (Articolo in rivista) (literal)

Anno

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

Alternative label

Yildiz A.; Öztürk M. K.; Bosi M.; Özçelik S.; Kasap M. (2009)
Structural, electrical and optical characterization of InGaN layers grown by MOVPE
in Chinese Physics B; IOP PUBLISHING LTD, BRISTOL BS1 6BE (Regno Unito)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Pagina inizio

Pagina fine

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

Rivista

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note

In: Chinese Physics B, vol. 18 pp. 4007 - 4012. IOP Publishing LTD, 2009. (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

Note

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

Physics Department, University of Ahi Evran, Asikpasa Kampusu, 40040, Kirsehir, Turkey, Mineral Analysis and Technology Department, MTA, 06520 Ankara, Turkey, CNR-IMEM, Parma, Physics Department, University of Gazi, 06500 Teknikokullar, Ankara, Turkey (literal)

Titolo

Structural, electrical and optical characterization of InGaN layers grown by MOVPE (literal)

Abstract

We present a study on n-type ternary InGaN layers grown by atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) on GaN template/(0001) sapphire substrate. An investigation of the different growth conditions on n-type Inx Ga1 − x N (x = 0.06 − 0.135) alloys was done for a series of five samples. The structural, electrical and optical properties were characterized by high resolution x-ray diffraction (HRXRD), Hall effect and photoluminescence (PL). Experimental results showed that different growth conditions, namely substrate rotation (SR) and change of total H2 flow (THF), strongly affect the properties of InGaN layers. This case can be clearly observed from the analytical results. When the SR speed decreased, the HRXRD scan peak of the samples shifted along a higher angle. Therefore, increasing the SR speed changed important structural properties of InGaN alloys such as peak broadening, values of strain, lattice parameters and defects including tilt, twist and dislocation density. From PL results it is observed that the growth conditions can be changed to control the emission wavelength and it is possible to shift the emission wavelength towards the green. Hall effect measurement has shown that the resistivity of the samples changes dramatically when THF changes. (literal)

Editore