Influence of annealing temperature on the opto-electronic characteristics of ZnTe electrodeposited semiconductors (Articolo in rivista)

Type
Label
  • Influence of annealing temperature on the opto-electronic characteristics of ZnTe electrodeposited semiconductors (Articolo in rivista) (literal)
Anno
  • 1997-01-01T00:00:00+01:00 (literal)
Alternative label
  • Kashyout A.B.; Arico A.S.; Antonucci P.L.; Mohamed F.A.; Antonucci V. (1997)
    Influence of annealing temperature on the opto-electronic characteristics of ZnTe electrodeposited semiconductors
    in Materials chemistry and physics (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Kashyout A.B.; Arico A.S.; Antonucci P.L.; Mohamed F.A.; Antonucci V. (literal)
Pagina inizio
  • 130 (literal)
Pagina fine
  • 134 (literal)
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  • http://www.scopus.com/inward/record.url?eid=2-s2.0-0031269880&partnerID=q2rCbXpz (literal)
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  • 51 (literal)
Rivista
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  • 2 (literal)
Note
  • Scopu (literal)
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  • C.N.R. Inst. Transformation S., Messina, Italy; Department of Mechanical Engineering, National Research Center, Dokki, Cairo, Egypt; University of Reggio Calabria, Faculty of Engineering, Institute of Chemistry, Reggio Calabria, Italy; C.N.R. Inst. Transformation S., Via Salita S. Lucia sopra, I-98126 S. Lucia, Messina, Italy; National Research Center, Dokki, Cairo, Egypt (literal)
Titolo
  • Influence of annealing temperature on the opto-electronic characteristics of ZnTe electrodeposited semiconductors (literal)
Abstract
  • Thin film ZnTe semiconductors for photovoltaic applications were prepared by electrodeposition in aqueous solution at - 0.75 V (SCE). X-ray diffraction analysis showed that polycrystalline ZnTe films were produced by annealing the deposits at 375 and 400°C. A filament-shaped morphology was observed in the electrodeposited samples, with a larger surface homogeneity for the films annealed at higher temperature. A direct energy gap of 2.3 eV at 400°C was found, in agreement with the literature. Sheet resistance, free carrier concentration and Hall mobility values were also determined. A decrease of majority carrier concentration and an increase of carrier mobility with the annealing temperature was related to the decrease of the level of crystallographic defects in the sample treated at 400°C. © 1997 Elsevier Science S.A. (literal)
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