InAs/InSb nanowire heterostructures grown by chemical beam epitaxy (Articolo in rivista)

Type
Label
  • InAs/InSb nanowire heterostructures grown by chemical beam epitaxy (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1088/0957-4484/20/50/505605 (literal)
Alternative label
  • Ercolani D. a; Rossi F. b; Li A. a; Roddaro S. a; Grillo V. c; Salviati G. b; Beltram F. d; Sorba L. a (2009)
    InAs/InSb nanowire heterostructures grown by chemical beam epitaxy
    in Nanotechnology (Bristol. Print); IOP Publishing Ltd., Bristol BS1 6BE (Regno Unito)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Ercolani D. a; Rossi F. b; Li A. a; Roddaro S. a; Grillo V. c; Salviati G. b; Beltram F. d; Sorba L. a (literal)
Pagina inizio
  • 505605-1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 20 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • In: Nanotechnology, vol. 20 (50) article n. 505605. IOP Publishing, 2009. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 6 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 50 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • a NEST, Scuola Normale Superiore, CNR-INFM, Piazza S. Silvestro 12, I-56127 Pisa, Italy; b IMEM-CNR, Parco Area delle Scienze 37/A, I-43010 Parma, Italy; c S3 CNR-INFM National Research Center on NanoStructures and BioSystems at Surfaces, via Campi 213/A, I-41100 Modena, Italy; d IIT at NEST, Center for Nanotechnology Innovation, Piazza S. Silvestro 12, Italy (literal)
Titolo
  • InAs/InSb nanowire heterostructures grown by chemical beam epitaxy (literal)
Abstract
  • We report the Au-assisted chemical beam epitaxy growth of defect-free zincblende InSb nanowires. The grown InSb segments are the upper sections of InAs/InSb heterostructures on InAs(111)B substrates. We show, through HRTEM analysis, that zincblende InSb can be grown without any crystal defects such as stacking faults or twinning planes. Strain-map analysis demonstrates that the InSb segment is nearly relaxed within a few nanometers from the interface. By post-growth studies we have found that the catalyst particle composition is AuIn2, and it can be varied to a AuIn alloy by cooling down the samples under TDMASb flux. (literal)
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