Growth of vertical InAs nanowires on heterostructured substrates (Articolo in rivista)

Type
Label
  • Growth of vertical InAs nanowires on heterostructured substrates (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1088/0957-4484/20/28/285303 (literal)
Alternative label
  • Roddaro S.; Caroff P.; Biasiol G.; Rossi F.; Bocchi C.; Nilsson K.; Froberg L.; Wagner J.; Samuelson L.; Wernersson L.; Sorba L. (2009)
    Growth of vertical InAs nanowires on heterostructured substrates
    in Nanotechnology (Bristol. Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Roddaro S.; Caroff P.; Biasiol G.; Rossi F.; Bocchi C.; Nilsson K.; Froberg L.; Wagner J.; Samuelson L.; Wernersson L.; Sorba L. (literal)
Pagina inizio
  • 285303 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://dx.doi.org/10.1088/0957-4484/20/28/285303 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 20 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • In: Nanotechnology, vol. 20 article n. 285303. IOP PUBLISHING, 2009. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 28 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-INFM, Pisa - NEST e POLYLAB, Solid State Physics and The Nanometer Structure Consortium, Lund University, CNR-INFM, Trieste - DEMOCRITOS e TASC, CNR-IMEM, Parma (literal)
Titolo
  • Growth of vertical InAs nanowires on heterostructured substrates (literal)
Abstract
  • We investigate the Au-assisted growth of InAs nanowires on two different kinds of heterostructured substrates: GaAs/AlGaAs structures capped by a 50 nm thick InAs layer grown by molecular beam epitaxy and a 2 μm thick InAs buffer layer on Si(111) obtained by vapor phase epitaxy. Morphological and structural properties of substrates and nanowires are analyzed by atomic force and transmission electron microscopy. Our results indicate a promising direction for the integration of III-V nanostructures on Si-based electronics as well as for the development of novel micromechanical structures incorporating nanowires as their active elements. (literal)
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