Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-Ray Detector Material (Articolo in rivista)

Type
Label
  • Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-Ray Detector Material (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1109/TNS.2009.2016964 (literal)
Alternative label
  • Zappettini A. a; Zha M. a; Marchini L. a; Calestani D. a; Mosca R. a; Gombia E. a; Zanotti L. a; Zanichelli M. b; Pavesi M. b; Auricchio N. cd; Caroli E. d (2009)
    Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-Ray Detector Material
    in IEEE transactions on nuclear science; IEEE-Institute Of Electrical And Electronics Engineers Inc., Piscataway (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Zappettini A. a; Zha M. a; Marchini L. a; Calestani D. a; Mosca R. a; Gombia E. a; Zanotti L. a; Zanichelli M. b; Pavesi M. b; Auricchio N. cd; Caroli E. d (literal)
Pagina inizio
  • 1743 (literal)
Pagina fine
  • 1746 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 56 (literal)
Rivista
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  • In: Ieee Transactions on Nuclear Science, vol. 56 (4) pp. 1743 - 1746. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, USA, 2009. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 4 (literal)
Note
  • Scopu (literal)
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • a CNR-IMEM, Parma, Italy; b Department of Physics, University of Parma, Italy; c Dept. of Physics, Univ. of Ferrara, Ferrara, Italy; d INAF/IASF-BO, Bologna, Italy (literal)
Titolo
  • Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-Ray Detector Material (literal)
Abstract
  • Two-inch-diameter CdZnTe crystals doped with indium were grown by the boron oxide encapsulated vertical Bridgman technique. The crystals showed large single crystalline yield and low etch pit density. The background impurity content was dominated by boron in concentration lower than 1 ppm. High resistivity was obtained and a procedure for contact preparation was developed. The mobility-lifetime product of the material was determined by both X-ray irradiation and photocurrent spectroscopy. The X-ray detector prepared with this material showed good spectroscopic performance. (literal)
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